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SK Hynix develops memory HBM2E speeds of up to 460 GB/s

MobiDevices – interesting magazine about technology! 12.08.2019 at 08:28

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The South Korean company SK Hynix announced the development of DRAM memory HBM2E with the highest throughput on the market. HBM2E has approximately 50% more capacity than the standard HBM2. SK Hynix HBM2E supports bandwidth up to 460,8 GB/s speed reaches 3.6 GB/s on each of 1024 lines input/output data. Through the use of technology TSV (Through Silicon Via), a maximum of eight 16-Gigabit chips vertically stacked on each other, forming a single package with a capacity of 16 GB.Unlike traditional products, DRAM memory devices with high bandwidth are closely associated with processors such as graphics chips and logic chip that provides faster data transfer. HBM2E will be the best solution-memory supercomputer applications, platforms, artificial intelligence and high-performance graphics processors. For example, a GPU with four stacks HBM2E will be able to boast of a 64-Gigabyte buffer with a capacity of 1840 GB/s. Its the world's first HBM company SK Hynix has released in 2013. Mass production SK Hynix HBM2E kicks off next year.